AP13P15GS

AP13P15GS/P Pb Free Plating Product Advanced Power Electronics Corp. ▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -150V 300mΩ -13A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP13P15GP) are available for low-profile applications. G D GD S TO-263(S) TO-220(P) S Rating -150 ±20 -13 -8.2 52 96 0.77 Units V V A A A W W/ ℃ ℃ ℃ Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.3 62 Units ℃/W ℃/W Data and specifications subject to change without notice 200728051-1/4 AP13P15GS/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown ...