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AP13P15GJ-HF-3 Dataheets PDF



Part Number AP13P15GJ-HF-3
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP13P15GJ-HF-3 DatasheetAP13P15GJ-HF-3 Datasheet (PDF)

Advanced Power Electronics Corp. AP13P15GH/J-HF-3 P-channel Enhancement-mode Power MOSFET Low On-resistance Simple Drive Requirement Fast Switching Characteristic RoHS-compliant, halogen-free D BV DSS RDS(ON) G S -150V 300mΩ -13A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP13P15GH-HF-3 is in the TO-252 package, which is widely used for commercial and industrial surface-mou.

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Advanced Power Electronics Corp. AP13P15GH/J-HF-3 P-channel Enhancement-mode Power MOSFET Low On-resistance Simple Drive Requirement Fast Switching Characteristic RoHS-compliant, halogen-free D BV DSS RDS(ON) G S -150V 300mΩ -13A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP13P15GH-HF-3 is in the TO-252 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters. The AP13P15GJ-HF-3 is in the TO-251 through-hole package which is used where a small PCB footprint or an attached heatsink is required. G D S D (tab) TO-252 (H) D (tab) G D S TO-251 (J) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating -150 ±20 -13 -8.2 -52 96 0.77 2 -55 to 150 -55 to 150 Units V V A A A W W/ °C W °C °C Total Power Dissipation Linear Derating Factor Total Power Dissipation 3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 1.3 62.5 110 Units °C/W °C/W °C/W Maximum Thermal Resistance, Junction-ambient Ordering Information AP13P15GH-HF-3TR : in RoHS-compliant halogen-free TO-252, shipped on tape and reel (3000 pcs/reel) AP13P15GJ-HF-3TB : in RoHS-compliant halogen-free TO-251, shipped in tubes (80pcs/tube) ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 201006242-3 1/6 Advanced Power Electronics Corp. AP13P15GHJ-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-7A VDS=VGS, ID=-250uA VDS=-10V, ID=-7A VDS=-150V, VGS=0V VGS= ±20V, VDS=0V ID=-7A VDS=-120V VGS=-10V VDS=-75V ID=-7A RG=10Ω ,VGS=-10V RD=10.7Ω VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Min. -150 -1 - Typ. 6 38 5 15 11 21 60 36 220 60 3.5 Max. Units 300 -3 -25 ±100 60 5 V mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1210 1940 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-7A, VGS=0V IS=-7A, VGS=0V, dI/dt=-100A/µs Min. - Typ. 110 620 Max. Units -1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse test - pulse width < 300µs, duty cycle < 2% 3.Surface mounted on 1 in copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 2/6 Advanced Power Electronics Corp. Typical Electrical Characteristics 25 AP13P15GHJ-HF-3 25 T C =25 o C 20 -10V -7.0V 20 T C = 150 o C -ID , Drain Current (A) -10V -7.0V -ID , Drain Current (A) 15 15 -5.0V 10 -5.0V 10 -4.5V 5 -4.5V 5 V G = - 3 .0V 0 V G = - 3 .0V 0 25 0 5 10 15 20 25 0 5 10 15 20 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1400 2.3 Fig 2. Typical Output Characteristics I D = -7 A T C =25 ° C 1000 I D =- 7 A V G =-10V 1.8 Normalized RDS(ON) RDS(ON) (mΩ ) 1.3 600 0.8 200 2 4 6 8 10 0.3 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature 1.5 6 4 Normalized -VGS(th) (V) 1.2 1.1 -IS(A) T j =150 o C T j =25 o C 2 0.7 0 0 0.2 0.4 0.6 0.8 1 0.3 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage vs. Junction Temperature ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 3/6 Advanced Power Electronics Corp. Typical Electrical Characteristics (cont.) 12 10000 AP13P15GHJ-HF-3.


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