P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP13P15GS/P-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Fast Switching Charac...
Description
AP13P15GS/P-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G S D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-150V 300mΩ -13A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP13P15GP) are available for low-profile applications. G D GD S
TO-263(S)
TO-220(P)
S Rating -150 +20 -13 -8.2 -52 96 0.77 Units V V A A A W W/ ℃ ℃ ℃
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Value 1.3 40 62
Units ℃/W ℃/W ℃/W 1 201107062
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
AP13P15GS/P-HF
Electrical Characteristics@Tj=25oC(unless otherwise s...
Similar Datasheet