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APTGT150A60T1G

Microsemi

IGBT

APTGT150A60T1G Phase leg Trench + Field Stop IGBT® Power Module 5 Q1 7 8 Q2 9 10 1 2 12 CR2 3 4 NTC 6 11 VCES = 600V IC...


Microsemi

APTGT150A60T1G

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Description
APTGT150A60T1G Phase leg Trench + Field Stop IGBT® Power Module 5 Q1 7 8 Q2 9 10 1 2 12 CR2 3 4 NTC 6 11 VCES = 600V IC = 150A* @ Tc = 80°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant CR1 Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 150°C Max ratings 600 225 * 150 * 350 ±20 480 300A @ 550V Unit V A August, 2007 1–5 APTGT150A60T1G – Rev 0 V W Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater than 30°C for the connectors. These Devices are sensitive to Electrostatic Dischar...




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