IGBT
APTGT150TL60G
Three level inverter Trench + Field Stop IGBT Power Module
VBUS
VCES = 600V IC = 150A @ Tc = 80°C
G1 Q1 ...
Description
APTGT150TL60G
Three level inverter Trench + Field Stop IGBT Power Module
VBUS
VCES = 600V IC = 150A @ Tc = 80°C
G1 Q1 E1
CR1
Application Solar converter Uninterruptible Power Supplies Features Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant
CR5 G2 Q2 NEUTRAL E2
CR2
OUT
CR6
G3 Q3 E3
CR3
G4 Q4 E4
CR4
0/VBUS
VBUS G1 E1
0/VBUS G4 NEUTRAL E4
E2 G2 OUT
E3 G3
Q1 to Q4 Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 150°C Max ratings 600 200 150 300 ±20 480 300A @ 550V Unit V A V W
APTGT150TL60G – Rev0 March, 2009
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
1-7
APTGT150TL60G
All ratings @ Tj = 25°C u...
Similar Datasheet
- APTGT150TL60G IGBT - Microsemi