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APTGT150DU60TG

Microsemi

IGBT

APTGT150DU60TG Dual common source Trench + Field Stop IGBT® Power Module C1 Q1 G1 C2 VCES = 600V IC = 150A @ Tc = 80°C ...


Microsemi

APTGT150DU60TG

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Description
APTGT150DU60TG Dual common source Trench + Field Stop IGBT® Power Module C1 Q1 G1 C2 VCES = 600V IC = 150A @ Tc = 80°C Application AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies Q2 G2 E1 E2 NTC1 E NTC2 Features Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Max ratings 600 225 150 350 ±20 480 300A @ 550V Unit V A June, 2006 1-5 APTGT150DU60TG – Rev 1 G2 E2 C2 C1 E C2 E1 G1 E2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 150°C V W Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See applicati...




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