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APTGT150DU120TG

Microsemi

Fast Trench + Field Stop IGBT3 Power Module

APTGT150DU120TG Dual common source Fast Trench + Field Stop IGBT3 Power Module G1 E1 NT C1 C1 Q1 C2 Q2 E G2 E2 NT ...


Microsemi

APTGT150DU120TG

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Description
APTGT150DU120TG Dual common source Fast Trench + Field Stop IGBT3 Power Module G1 E1 NT C1 C1 Q1 C2 Q2 E G2 E2 NT C2 VCES = 1200V IC = 150A @ Tc = 80°C Application  AC Switches  Switched Mode Power Supplies  Uninterruptible Power Supplies Features  Fast Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated  Kelvin emitter for easy drive  Very low stray inductance - Symmetrical design - Lead frames for power connections  High level of integration  Internal thermistor for temperature monitoring Benefits  Stable temperature behavior  Very rugged  Solderable terminals for easy PCB mounting  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Easy paralleling due to positive TC of VCEsat  Low profile  RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 V IC Continuous Collector Current TC = 25°C 220 TC = 80°C 150 A ICM Pulsed Collector Current TC = 25°C 350 VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation TC = 25°C 690 W RBSOA Reverse Bias Safe Operating Area Tj = 125°C 300A @ 1150V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT150DU120TG – Rev 2 October, 2...




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