IGBT
APTGT150DH60TG
Asymmetrical - Bridge Trench + Field Stop IGBT® Power Module
VBUS VBUS SENSE Q1 G1 CR3
VCES = 600V IC = ...
Description
APTGT150DH60TG
Asymmetrical - Bridge Trench + Field Stop IGBT® Power Module
VBUS VBUS SENSE Q1 G1 CR3
VCES = 600V IC = 150A @ Tc = 80°C
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Max ratings 600 225 150 350 ±20 480 300A @ 550V Unit V
June, 2006 1-5 APTGT150DH60TG – Rev 1
E1 OUT1 O UT2 Q4 G4 CR2 E4
0/VBUS SENSE
NTC1
0/VBUS
NT C2
VBUS SENSE
G4 E4
OUT2
VBUS
0/VBUS
OUT1
E1 G1
0/VBUS SENSE
NTC2 NTC1
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 150°C
A V W
Reverse Bias Safe Operating Area
These Devices...
Similar Datasheet
- APTGT150DH60TG IGBT - Microsemi