IGBT
APTGT150DH170G
Asymmetrical - Bridge Trench + Field Stop IGBT® Power Module
VBUS Q1 G1 CR3
VCES = 1700V IC = 150A @ Tc ...
Description
APTGT150DH170G
Asymmetrical - Bridge Trench + Field Stop IGBT® Power Module
VBUS Q1 G1 CR3
VCES = 1700V IC = 150A @ Tc = 80°C
Application Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant
E1
OUT1 OUT2
Q4 G4 CR2 E4
0/VBUS
OUT1 G1 E1 VBUS 0/VBUS
E4 G4 OUT2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C
Reverse Bias Safe Operating Area
300A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
1-5
APTGT150DH170G – Rev 1
July, 2006
Max ratings 1700 250 150 300 ±20 890
Unit V A V W
APTGT150DH170G
All ratings @ Tj =...
Similar Datasheet
- APTGT150DH170 IGBT - Advanced Power Technology
- APTGT150DH170G IGBT - Microsemi