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APTGT150DH120 Dataheets PDF



Part Number APTGT150DH120
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description IGBT
Datasheet APTGT150DH120 DatasheetAPTGT150DH120 Datasheet (PDF)

APTGT150DH120 Asymmetrical - Bridge Fast Trench + Field Stop IGBT® Power Module VBUS Q1 G1 CR3 VCES = 1200V IC = 150A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy .

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APTGT150DH120 Asymmetrical - Bridge Fast Trench + Field Stop IGBT® Power Module VBUS Q1 G1 CR3 VCES = 1200V IC = 150A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile E1 OUT1 OUT2 Q4 G4 CR2 E4 0/VBUS OUT1 G1 E1 VBUS 0/VBUS E4 G4 OUT2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Reverse Bias Safe Operating Area 300A @ 1150V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT150DH120 – Rev 0 May, 2005 Max ratings 1200 220 150 350 ±20 690 Unit V A V W APTGT150DH120 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 150A Tj = 125°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Min Typ 1.7 2.0 5.8 Max 500 2.1 6.5 600 Unit µA V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 150A R G = 2.2Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 150A R G = 2.2Ω Min Typ 10.7 0.56 0.48 280 40 450 75 290 45 550 90 14 16 Max Unit nF ns ns mJ Diode ratings and characteristics Symbol Characteristic VRRM IRM IF(A V) VF trr Qrr Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 1200 Typ Max 250 500 Unit V µA A Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VR=1200V 50% duty cycle IF = 150A IF = 150A VR = 600V di/dt =3000A/µs 150 1.6 1.6 170 280 15 29 2.1 V ns µC May, 2005 APT website – http://www.advancedpower.com 2-5 APTGT150DH120 – Rev 0 APTGT150DH120 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.18 0.32 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Package outline (dimensions in mm) APT website – http://www.advancedpower.com 3-5 APTGT150DH120 – Rev 0 May, 2005 APTGT150DH120 Typical Performance Curve Output Characteristics (VGE =15V) Output Characteristics 300 T J = 125°C 250 T J=125°C VGE =17V VGE=13V VGE =15V VGE=9V 300 250 IC (A) TJ =25°C 200 150 100 50 0 0 1 2 VCE (V) 3 4 IC (A) 200 150 100 50 0 0 1 2 VCE (V) 3 4 300 250 200 IC (A) 150 100 50 0 5 Transfert Characteristics 32 T J=25°C TJ=125°C Energy losses vs Collector Current 28 24 E (mJ) 20 16 12 8 4 0 0 50 100 150 IC (A) Reverse Bias Safe Operating Area 350 300 250 IC (A) Eoff Er VCE = 600V VGE = 15V RG = 2.2Ω TJ = 125°C Eoff Eon TJ =125°C 6 7 8 9 10 11 12 200 250 300 VGE (V) Switching Energy Losses vs Gate Resistance 34 30 26 E (mJ) 22 18 14 10 6 2 0 2 4 6 8 10 12 14 Gate Resistance (ohms) 16 18 Er VCE = 600V VGE =15V IC = 150A T J = 125°C Eon 200 150 100 50 0 0 300 600 900 V CE (V) 1200 1500 VGE =15V TJ=125°C RG=2.2Ω maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.2 Thermal Impedance (°C/W) 0.9 0.16 0.7 0.5 0.08 0.04 0.3 0.1 0.05 0 0.00001 0.0001 0.001 Single Pulse 0.01 0.1 1 10 IGBT rectangular Pulse Duration (Seconds) APT website – http://www.advancedpower.com 4-5 APTGT150DH120 – Rev 0 May, 2005 0.12 APTGT150DH120 Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 60 50 40 30 20 10 0 0 40 80 120 IC (A) 160 200 240 Hard.


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