DatasheetsPDF.com

APTGT150A120T Dataheets PDF



Part Number APTGT150A120T
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description IGBT
Datasheet APTGT150A120T DatasheetAPTGT150A120T Datasheet (PDF)

APTGT150A120T Phase leg Fast Trench + Field Stop IGBT® Power Module VBUS Q1 G1 NTC2 VCES = 1200V IC = 150A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for ea.

  APTGT150A120T   APTGT150A120T



Document
APTGT150A120T Phase leg Fast Trench + Field Stop IGBT® Power Module VBUS Q1 G1 NTC2 VCES = 1200V IC = 150A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile E1 OUT Q2 G2 E2 0/VBU S NTC1 G2 E2 OUT VBUS 0/VBUS OUT E1 G1 E2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 1200 220 150 350 ±20 690 300A @ 1150V Unit V May, 2005 1-5 APTGT150A120T – Rev 0 A V W Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com APTGT150A120T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 150A Tj = 125°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Min Typ 1.7 2.0 5.8 Max 1 2.1 6.5 600 Unit mA V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 150A R G = 2.2Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 150A R G = 2.2Ω Min Typ 10.7 0.56 0.48 280 40 450 75 290 45 550 90 14 16 Max Unit nF ns ns mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF(A V) VF trr Qrr Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 1200 Typ Max 250 500 Unit V µA A Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VR=1200V 50% duty cycle IF = 150A IF = 150A VR = 600V di/dt =3000A/µs 150 1.6 1.6 170 280 15 29 2.1 V ns µC May, 2005 APT website – http://www.advancedpower.com 2-5 APTGT150A120T – Rev 0 APTGT150A120T Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit kΩ K RT = R 25   1 1  RT : Thermistor value at T exp B 25 / 85   T − T    25  T: Thermistor temperature Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.18 0.32 150 125 125 4.7 160 Unit °C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To Heatsink M5 2500 -40 -40 -40 1.5 V °C N.m g Package outline (dimensions in mm) APT website – http://www.advancedpower.com 3-5 APTGT150A120T – Rev 0 May, 2005 APTGT150A120T Typical Performance Curve 300 250 IC (A) Output Characteristics (VGE =15V) TJ =25°C T J=125°C Output Characteristics 300 T J = 125°C 250 200 IC (A) 150 100 50 0 VGE =17V VGE=13V VGE =15V VGE=9V 200 150 100 50 0 0 1 2 VCE (V) 3 4 0 1 2 VCE (V) 3 4 300 250 200 IC (A) 150 100 50 0 5 Transfert Characteristics 32 T J=25°C TJ=125°C Energy losses vs Collector Current 28 24 E (mJ) 20 16 12 8 4 0 0 50 100 150 IC (A) Reverse Bias Safe Operating Area 350 300 250 IC (A) Eoff Er VCE = 600V VGE = 15V RG = 2.2Ω TJ = 125°C Eoff Eon TJ =125°C 6 7 8 9 10 11 12 200 250 300 VGE (V) Switching Energy Losses vs Gate Resistance 34 30 26 E (mJ) 22 18 14 10 6 2 0 2 4 6 8 10 12 14 Gate Resistance (ohms) 16 18 Er VCE = 600V VGE =15V IC = 150A T J = 125°C Eon 200 150 100 50 0 0 300 600 900 V CE (V) 1200 1500 VGE =15V TJ=125°C RG=2.2Ω maximum Effective Transient Ther.


APTGT150A170 APTGT150A120T APTGT150A120D3


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)