CEM9436A

CEM9436A PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 6.2A , RDS(ON)=38m Ω @VGS=10V. RDS(ON)=52m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. D 8 D 7 D 6 D 5 1 2 3 4 SO-8 1 S S S G ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a Symbol VDS VGS ID IDM a Limit 30 Unit V V A A A W C Ć20 6.2 25 2.5 2.5 -55 to 150 Drain-Source Diode Forward Current Maximum Power Dissipation a IS PD TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a RįJA 50 C/W 1 CEM9436A ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS c Symbol Condition VGS = 0V, ID = 250µA VDS = 24V, VGS = 0V VGS =Ć20V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 6.2A VGS = 4.5V, ID =5.6A VDS 5V, VGS = 10V ś Min Typ C Max Unit 5 30 1 Ć100 V µA nA V mΩ mΩ A 7 400 180 55 S PF PF PF ON CHARACTERISTICS b Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 1 30 40 25 3 38 52 VDS = 10V, ID = 6.2A DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS ...