CEM8207
Feb. 2003
Dual N-Channel Enhancement Mode Field Effect Transistor
5
FEATURES
20V , 6A , RDS(ON)=20m Ω @VGS=4.5...
CEM8207
Feb. 2003
Dual N-Channel Enhancement Mode Field Effect
Transistor
5
FEATURES
20V , 6A , RDS(ON)=20m Ω @VGS=4.5V. RDS(ON)=30m Ω @VGS=2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface Mount Package.
1 2 3 4
D1
8
D1
7
D2
6
D2
5
SO-8 1
S1
G1 S2
G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 20 Unit V V A A A W C
Ć12 Ć6 Ć24
6 2 -55 to 150
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a RįJA 62.5 C/W
5-78
CEM8207
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS
c
Symbol
Condition
VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS =Ć10V, VDS = 0V VDS = VGS, ID = 250µA VGS = 4.5V, ID = 6.0A VGS = 2.5V, ID = 5.2A VDS = 5V, VGS = 4.5V VDS =10V, ID = 6.0A
Min Typ C Max Unit
5
20 1 Ć10 0.5 17 23 10 7 16 950 450 135 1.5 20 30 V µA µA V mΩ mΩ A S
PF PF PF
ON CHARACTERISTICS b
Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS CO...