P2904BD

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2904BD TO-252 Halogen-Free & Lead- Free D PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 29mΩ ID 25A G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation 2 1 SYMBOL VDS VGS LIMITS 40 ±20 25 20 75 27 37 30 20 -55 to 150 UNITS V V TC = 25 °C TC = 70 °C ID IDM IAS A L = 0.1mH TC = 25 °C TC = 70 °C EAS PD Tj, Tstg mJ W °C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 SYMBOL RθJc RθJA TYPICAL MAXIMUM 4.1 40 UNITS °C / W °C / W Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 LIMITS UNIT MIN TYP MAX V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 32V, VGS = 0V VDS = 30V, VGS = 0V, TJ = 125 °C VDS = 5V, VGS = 10V 40 2 2.4 3 V ±250 nA 1 10 µA A 75 REV 1.0 1 Oct-14-2010 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2904BD TO-252 Halogen-Free & Lead- Free VGS = 5V, ID = 8A Drain-Source O...