CEU61A3

CED61A3/CEU61A3 Jan. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 30V , 40A , RDS(ON)=13.5mΩ @VGS=10V. RDS(ON)=20m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-251 & TO-252 package. D G S G D S D G CEU SERIES TO-252AA(D-PAK) CED SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 Unit V V A A A W W/ C C Ć20 40 120 40 50 0.4 -55 to 150 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RįJC RįJA 6-62 2.5 50 C/W C/W CED61A3/CEU61A3 ELECTRICAL CHARACTERISTICS (TC= 25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS b Symbol Condition VGS = 0V, ID=250µA VDS = 30V, VGS = 0V VGS = Ć20V, VDS = 0V VDS = VGS, ID 250µA VGS = 10V, ID = 20A VGS = 4.5V, ID = 18A VDS = 10V, VGS = 10V VDS = 10V, ID = 26A Min Typ Max Unit 30 1 Ć100 1 11 16.5 40 34 1200 480 130 3 V µA nA V mΩ A S PF PF PF C 4 6 ON CHARACTERISTICS a Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconduc...