FDW2510NZ

FDW2510NZ April 2004 FDW2510NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild’s Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features 6.4 A, 20 V RDS(ON) = 24 mΩ @ VGS = 4.5 V RDS(ON) = 32 mΩ @ VGS = 2.5 V Extended VGSS range (±12V) for battery applications ESD protection diode (note 3) High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package Applications Li-Ion Battery Pack G2 S2 S2 D2 G1 S1 S1 D1 Pin 1 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 20 ±12 (Note 1a) Units V V A W °C 6.4 30 1.6 1.1 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 77 114 °C/W °C/W Package Marking and Ordering Information Device Marking 2510NZ Device FDW2510NZ Reel Size 13’’ Tape width 12mm Quantity 3000 units ©2004 Fairchild Semiconductor Corporation FDW2510NZ Rev C(W) FDW2510NZ Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS TA = 25°C unless otherwise noted Parame...