TPC8204

TPC8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) TPC8204 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l Small footprint due to small and thin package l Low drain−source ON resistance l Low leakage current l Enhancement−mode : RDS (ON) = 16 mΩ (typ.) l High forward transfer admittance : |Yfs| = 18 S (typ.) : IDSS = 10 µA (max) (VDS = 20 V) : Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20kΩ) Gate-source voltage Drain curren DC Pulse (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 20 20 ±12 6 24 1.5 W PD(2) 1.1 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1E Single-device operation Drain power (Note 3a) dissipation (t = 10s) Single-device value (Note 2a) at dual operation (Note 3b) Drain power dissipation (t = 10s) Single-device value (Note 2b) at dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current (Note 1) Single-device operation (Note 3a) Weight: 0.080 g (typ.) Circuit Configuration PD (1) 0.75 W PD (2) EAS IAR EAR Tch Tstg 0.45 46.8 6 0.1 150 −55~150 mJ A mJ °C °C Repetitive avalanche energy Single-device value at operation (Note 2a, Note 3b, Note 5) Channel temperature Storage temperature range Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5) please refer to the next page. This transistor is an electrostatic sensitive device. Please handle wi...