Si4354DY

Si4354DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0165 at VGS = 10 V 0.0185 at VGS = 4.5 V ID (A) 9.5 9.0 FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Gen II Power MOSFET 100 % Rg Tested APPLICATIONS High-Side DC/DC Conversion - Notebook - Server SO-8 S S S G 1 2 3 4 Top View S Ordering Information: Si4354DY-T1-E3 (Lead (Pb)-free) Si4354DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D D G D ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)b Pulsed Drain Current Continuous Source Current (Diode Conduction)b Maximum Power Dissipationb Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 30 ± 12 9.5 7.5 40 2.2 2.5 1.6 - 55 to 150 W °C A Unit V THERMAL RESISTANCE RATINGSa Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Foot (Drain) Notes: a. t ≤ 10 s. b. Surface Mounted on 1" x 1" FR4 board. Symbol RthJA RthJF Typical 43 19 Maximum 50 25 Unit °C/W Document Number: 72967 S09-0392-Rev. C, 09-Mar-09 www.vishay.com 1 Si4354DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Volta...