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SI4300 Dataheets PDF



Part Number SI4300
Manufacturers Silicon Laboratories
Logo Silicon Laboratories
Description Dual-Band Monolithic Power Amplifier System
Datasheet SI4300 DatasheetSI4300 Datasheet (PDF)

Si4300 Dual-Band Monolithic Power Amplifier System Description The Si4300 is a complete, monolithic, high-power, and high-performance power amplifier system that integrates all functions and all components between the transmit portion of the transceiver and antenna switch module (ASM). The integrated circuit consists of two amplification paths which supports GSM 900 and DCS 1800. These amplifiers are General Packet Radio Service (GPRS) class 12 compatible and can be used in GPRS multi-slot appli.

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Si4300 Dual-Band Monolithic Power Amplifier System Description The Si4300 is a complete, monolithic, high-power, and high-performance power amplifier system that integrates all functions and all components between the transmit portion of the transceiver and antenna switch module (ASM). The integrated circuit consists of two amplification paths which supports GSM 900 and DCS 1800. These amplifiers are General Packet Radio Service (GPRS) class 12 compatible and can be used in GPRS multi-slot applications. The Si4300 integrates the input and output matching networks, complete power control, thermal and load mismatch protection, and many other features and functions in a single, standard CMOS die on a ceramic substrate. Features - Small 25 mm2 package (3.9 x 6.4 x 1.3 mm) - Complete power control - Thermal and load mismatch protection - Harmonic filtering - Input and output matching circuits - Optimal average burst current (ABC) for all power levels - Low powerdown current during receive and standby - GPRS Class 12 compatible - 3.0 to 4.8 V operation - JEDEC moisture sensitivity level (MSL) 1 - RoHS compliant Applications - E-GSM 900 and DCS 1800 dual-band cellular handsets - GPRS data terminals VBAT APC Low Pass Filter Power Control Si4300 RFIL Limiter PA Matching Network Harmonic Filter RFOL GND Matching Network Limiter PA RFOH Harmonic Filter RFIH TLIMIT PAEN VDD SHUTD BSEL Monitor, Control, and I/O Interface Temperature and Voltage Sensors Power Amplifier Copyright © 2005 by Silicon Laboratories 11.10.05 Si4300 Dual-Band Monolithic Power Amplifier System Selected Electrical Specifications Parameter Input Power Output Noise Power Symbol PIN Test Condition GSM Across all operating conditions RBW = 100 kHz, f = 925 to 935 MHz RBW = 100 kHz, f > 935 MHz, 6 dBm POUT = over all power levels, All combinations of the following: PIN = 3.5 to 11 dBm, APC < 2.0 V, TC = –20 to 85 °C, VBAT = 3.0 to 4.8 V, Antenna VSWR ≤ 20:1, all angles Post-PA loss ≥ 1.4 dB DCS Across all operating conditions RBW = 100 kHz, f = 1805–1880 MHz RBW = 100 kHz, f > 1880 MHz POUT = over all power levels, All combinations of the following: PIN = 3.5 to 9 dBm, APC < 2.0 V, TC = –20 to 85 °C, VBAT = 3.0 to 4.8 V, Antenna VSWR ≤ 20:1, all angles Post-PA loss ≥ 1.4 dB Min 3.5 — — — — Typ — — –86 1.6:1 — Max 11 –72 –84 1.8:1 no damage or permanent degradation Unit dBm dBm dBm Input VSWR Ruggedness Input Power Output Noise Power PIN PNOISE 3.5 — — — — — — — 1.6:1 — 9 –77 –77 1.8:1 no damage or permanent degradation dBm dBm dBm Input VSWR Ruggedness Pin Assignments (Top View) N/C BSEL RFIL GND RFIH APC N/C 1 E A Package Information C A M DETAIL A 0.10 M C A B NC 15 14 RFOH B (2X) aaa C C1 P1 S2 S1 C2 2 GND 16 VBAT VBAT 13 PAEN D C1 P4 P2 P3 S3 S4 S5 3 17 4 5 12 11 18 10 TLIMIT SHUTD (2X) DETAIL D (6X) aaa C 0.10 M DETAIL B (10X) 0.10 M C A B Bottom View DETAIL C (3X) 0.10 M VDD GND C A B C A B Top View Side View 6 GND 19 NC 20 .


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