Si4544DY

Si4544DY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 - 30 RDS(on) (Ω) 0.035 at VGS = 10 V 0.050 at VGS = 4.5 V 0.045 at VGS = - 10 V 0.090 at VGS = - 4.5 V ID (A) ± 6.5 ± 5.4 ± 5.7 ± 4.0 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs Compliant to RoHS Directive 2002/95/EC S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D D D D G1 D G2 Ordering Information: Si4544DY-T1-E3 (Lead (Pb)-free) Si4544DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 30 ± 20 ± 6.5 ± 5.4 ± 20 1.7 2.4 1.5 - 55 to 150 P-Channel - 30 ± 20 ± 5.7 ± 4.0 ± 20 - 1.7 W °C A Unit V Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. Symbol RthJA N- or P-Channel 52 Unit °C/W Document Number: 70768 S09-0868-Rev. D, 18-May-09 www.vishay.com 1 Si4544DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V,...