Document
Si4810BDY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V) 30 rDS(on) (Ω) 0.0135 at VGS = 10 V 0.020 at VGS = 4.5 V ID (A) 10 8
FEATURES
• • • • TrenchFET® Power MOSFETS Fast Switching Speed Low Gate Charge 100 % UIS and Rg Tested
Pb-free Available
RoHS*
COMPLIANT
SCHOTTKY PRODUCT SUMMARY
VDS (V) 30 Diode Forward Voltage VSD (V) 0.53 at 3.0 A IF (A) 3.8
APPLICATIONS
• DC-DC Logic Level • Low Voltage and Battery Powered Applications
D
SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D D D D Ordering Information: Si4810BDY-T1 Si4810BDY-T1-E3 (Lead (Pb)-free)
G N-Channel MOSFET S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150 °C) (MOSFET)a Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)
a
Symbol VDS VGS TA = 25 °C TA = 70 °C ID IDM IS IF IFM L = 0.1 mH TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C TJ, Tstg PD IAS EAS
10 sec 30 30
Steady State
Unit V
± 20 10 8 50 2.3 3.8 40 20 20 2.5 1.6 2.0 1.3 - 55 to 150 1.38 0.88 1.31 0.84 °C W mJ 1.25 2.4 A 7.5 6
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambient (t ≤ 10 sec)a Maximum Junction-to-Ambient (t = Steady State)a Maximum Junction-to-Foot (t = Steady State)a Device MOSFET Schottky MOSFET Schottky MOSFET Schottky RthJF RthJA Symbol Typical 36 44 73 77 17 24 Maximum 50 60 90 95 21 30 °C/W Unit
Notes: a. Surface Mounted on FR4 Board. For SPICE model information vis the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72229 S-70138-Rev. C, 22-Jan-07 www.vishay.com 1
Si4810BDY
Vishay Siliconix
MOSFET AND SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current (MOSFET and Schottky) On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Schottky Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 3.0 A, di/dt = 100 A/µs VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 0.2 VDS = 15 V, VGS = 5.0 V, ID = 10 A 14.5 6.3 4.7 0.55 17 13 45 15 36 0.9 30 20 90 25 70 ns Ω 22 nC VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 100 °C VDS = 30 V, VGS = 0 V, TJ = 125 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 5 A VDS = 15 V, ID = 10 A IS = 3.0 A, VGS = 0 V IS = 3.0 A, VGS = 0 V, TJ = 125 °C 20 0.0105 0.016 25 0.485 0.420 0.53 0.47 0.0135 0.020 0.007 1.5 6.5 1 3 ± 100 0.100 10 20 A Ω S V mA V nA Symbol Test Conditions Min Typ Max Unit
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 72229 S-70138-Rev. C, 22-Jan-07
Si4810BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 VGS = 10 thru 5 V 40 I D - Drain Current (A) I D - Drain Current (A) 50
40
30 4V 20
30
20 TC = 125 °C 10 25 °C
10 3V 0 0 1 2 3 4 5
- 55 °C 0 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.040 2500
Transfer Characteristics
Ciss (MOSFET) r DS(on) - On-Resistance ( ) 0.032 C - Capacitance (pF) 2000
0.024 VGS = 4.5 V 0.016 VGS = 10 V 0.008
1500
1000 Coss (MOSFET and Schottky) 500
Crss (MOSFET)
0.000 0 10 20 30 40 50
0 0 4 8 12 16 20
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
6 VDS = 15 V ID = 10 A VGS - Gate-to-Source Voltage (V) 5 rDS(on) - On-Resistance (Normalized) 1.4 1.6 VGS = 10 V ID = 10 A
Capacitance
4
1.2
3
1.0
2
1
0.8
0 0 3 6 9 12 15 18 Qg - Total Gate Charge (nC)
0.6 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Gate Charge Document Number: 72229 S-70138-Rev. C, 22-Jan-07
On-Resistance vs. Junction Temperature www.vishay.com 3
Si4810BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 0.06
0.05 I S - Source Current (A) 10 TJ = 150 °C TJ = 25 °C r DS(on) - On-Resistance.