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Si4810BDY Dataheets PDF



Part Number Si4810BDY
Manufacturers Vishay
Logo Vishay
Description N-Channel 30-V (D-S) MOSFET
Datasheet Si4810BDY DatasheetSi4810BDY Datasheet (PDF)

Si4810BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) 0.0135 at VGS = 10 V 0.020 at VGS = 4.5 V ID (A) 10 8 FEATURES • • • • TrenchFET® Power MOSFETS Fast Switching Speed Low Gate Charge 100 % UIS and Rg Tested Pb-free Available RoHS* COMPLIANT SCHOTTKY PRODUCT SUMMARY VDS (V) 30 Diode Forward Voltage VSD (V) 0.53 at 3.0 A IF (A) 3.8 APPLICATIONS • DC-DC Logic Level • Low Voltage and Battery Powered Applications D SO-8 S S .

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Si4810BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) 0.0135 at VGS = 10 V 0.020 at VGS = 4.5 V ID (A) 10 8 FEATURES • • • • TrenchFET® Power MOSFETS Fast Switching Speed Low Gate Charge 100 % UIS and Rg Tested Pb-free Available RoHS* COMPLIANT SCHOTTKY PRODUCT SUMMARY VDS (V) 30 Diode Forward Voltage VSD (V) 0.53 at 3.0 A IF (A) 3.8 APPLICATIONS • DC-DC Logic Level • Low Voltage and Battery Powered Applications D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D Ordering Information: Si4810BDY-T1 Si4810BDY-T1-E3 (Lead (Pb)-free) G N-Channel MOSFET S Schottky Diode ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150 °C) (MOSFET)a Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky) a Symbol VDS VGS TA = 25 °C TA = 70 °C ID IDM IS IF IFM L = 0.1 mH TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C TJ, Tstg PD IAS EAS 10 sec 30 30 Steady State Unit V ± 20 10 8 50 2.3 3.8 40 20 20 2.5 1.6 2.0 1.3 - 55 to 150 1.38 0.88 1.31 0.84 °C W mJ 1.25 2.4 A 7.5 6 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (t ≤ 10 sec)a Maximum Junction-to-Ambient (t = Steady State)a Maximum Junction-to-Foot (t = Steady State)a Device MOSFET Schottky MOSFET Schottky MOSFET Schottky RthJF RthJA Symbol Typical 36 44 73 77 17 24 Maximum 50 60 90 95 21 30 °C/W Unit Notes: a. Surface Mounted on FR4 Board. For SPICE model information vis the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72229 S-70138-Rev. C, 22-Jan-07 www.vishay.com 1 Si4810BDY Vishay Siliconix MOSFET AND SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current (MOSFET and Schottky) On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Schottky Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 3.0 A, di/dt = 100 A/µs VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 0.2 VDS = 15 V, VGS = 5.0 V, ID = 10 A 14.5 6.3 4.7 0.55 17 13 45 15 36 0.9 30 20 90 25 70 ns Ω 22 nC VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 100 °C VDS = 30 V, VGS = 0 V, TJ = 125 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 5 A VDS = 15 V, ID = 10 A IS = 3.0 A, VGS = 0 V IS = 3.0 A, VGS = 0 V, TJ = 125 °C 20 0.0105 0.016 25 0.485 0.420 0.53 0.47 0.0135 0.020 0.007 1.5 6.5 1 3 ± 100 0.100 10 20 A Ω S V mA V nA Symbol Test Conditions Min Typ Max Unit Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72229 S-70138-Rev. C, 22-Jan-07 Si4810BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 VGS = 10 thru 5 V 40 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 4V 20 30 20 TC = 125 °C 10 25 °C 10 3V 0 0 1 2 3 4 5 - 55 °C 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.040 2500 Transfer Characteristics Ciss (MOSFET) r DS(on) - On-Resistance ( ) 0.032 C - Capacitance (pF) 2000 0.024 VGS = 4.5 V 0.016 VGS = 10 V 0.008 1500 1000 Coss (MOSFET and Schottky) 500 Crss (MOSFET) 0.000 0 10 20 30 40 50 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 6 VDS = 15 V ID = 10 A VGS - Gate-to-Source Voltage (V) 5 rDS(on) - On-Resistance (Normalized) 1.4 1.6 VGS = 10 V ID = 10 A Capacitance 4 1.2 3 1.0 2 1 0.8 0 0 3 6 9 12 15 18 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge Document Number: 72229 S-70138-Rev. C, 22-Jan-07 On-Resistance vs. Junction Temperature www.vishay.com 3 Si4810BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 0.06 0.05 I S - Source Current (A) 10 TJ = 150 °C TJ = 25 °C r DS(on) - On-Resistance.


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