Si4894BDY

Si4894BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.011 at VGS = 10 V 0.016 at VGS = 4.5 V ID (A) 12 9.8 FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET 100 % Rg Tested D SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4894BDY-T1-E3 (Lead (Pb)-free) Si4894BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 7 6 5 D D D D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Conduction)a L = 0.1 mH TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 2.5 1.6 - 55 to 150 2.3 20 20 1.4 0.9 mJ W °C 12 9.5 40 1.3 10 s 30 ± 20 8.9 7.1 A Steady State Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 43 73 19 Maximum 50 90 25 °C/W Unit Document Number: 72993 S09-0540-Rev. D, 06-Apr-09 www.vishay.com 1 Si4894BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Sourc...