N-Channel 30 V (D-S) Fast Switching MOSFET
Si7342DP
Vishay Siliconix
N-Channel 30 V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.00825 at...
Description
Si7342DP
Vishay Siliconix
N-Channel 30 V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.00825 at VGS = 10 V 0.00975 at VGS = 4.5 V ID (A) 15 13
FEATURES
Halogen-free According to IEC 61249-2-21 Definition Extremely Low Qgd for Low Switching Losses TrenchFET® Power MOSFET New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC
PowerPAK SO-8
APPLICATIONS
6.15 mm
S 1 2 3 4 D 8 7 6 5 D D D S S G
5.15 mm
High-Side DC/DC Conversion - Notebook - Server
D
G
Bottom View Ordering Information: Si7342DP-T1-E3 (Lead (Pb)-free) Si7342DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation
a
Symbol VDS VGS TA = 25 °C TA = 70 °C ID IDM IS TA = 25 °C TA = 70 °C PD TJ, Tstg
10 s
15 12 4.1 5 3.2
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c
Steady State 30 ± 12 9 7 ± 60 1.5 1.8 1.1 - 55 to 150 260
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Case (Drain) t 10 s Steady State Steady State Symbol RthJA RthJC Typical 20 53 2.1 Maximum 25 70 3.2 Unit °C/W
Notes: a. Surface mounted on 1” x 1” FR4 board. b. See sol...
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