Document
Si7388DP
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.007 at VGS = 10 V 0.010 at VGS = 4.5 V ID (A) 19 15
FEATURES
• Halogen-free available • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested
RoHS
COMPLIANT
PowerPAK SO-8
APPLICATIONS
• DC/DC Synchronous Rectifier
6.15 mm
S 1 2 3 S S
5.15 mm
G 4
D
D 8 7 6 5 D D D
G
Bottom View Ordering Information: Si7388DP-T1-E3 (Lead (Pb)-free) Si7388DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 s Steady State 30 ± 20 12 9 ± 50 1.6 1.9 1.2 - 55 to 150 260 Unit V
19 15 4.1 5 3.2
A
W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Steady State Symbol RthJA RthJC Typical 20 55 2.0 Maximum 25 65 2.6 Unit °C/W
Notes: a. Surface Mounted on 1” x 1” FR4 board. b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71919 S-80438-Rev. E, 03-Mar-08
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Si7388DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 3 A, di/dt = 100 A/µs VDD = 15 V, RL = 15 Ω ID ≅ 1.0 A, VGEN = 10 V, RG = 6 Ω 0.5 14 10 44 20 40 VDS = 15 V, VGS = 5.0 V, ID = 19 A 16.3 4 5.9 2.2 20 15 70 30 70 ns Ω 24 nC
a
Symbol VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD
Test Conditions VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 12 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 70 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 19 A VGS = 4.5 V, ID = 15 A VDS = 15 V, ID = 19 A IS = 4.1 A, VGS = 0 V
Min. 0.80
Typ.
Max. 1.6 ± 100 1 5
Unit V nA µA A
40 0.0058 0.008 40 0.75 1.1 0.007 0.010
Ω S V
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 VGS = 10 thru 3 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50
30
30
20
20 TC = 125 °C 10 25 °C - 55 °C
10 1V 0 0 2 4 6 8 10 2V
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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Document Number: 71919 S-80438-Rev. E, 03-Mar-08
Si7388DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
0.020
25 °C, unless otherwise noted
2500
R DS(on) - On-Resistance (Ω)
0.016 C - Capacitance (pF)
2000 Ciss 1500
0.012 VGS = 4.5 V 0.008 VGS = 10 V 0.004
1000 Coss 500 Crss
0.000 0 10 20 30 40 50
0 0 5 10 15 20 25 30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10 VDS = 15 V ID = 16 A R DS(on) - On-Resistance (Normalized) 1.8 VGS = 10 V ID = 16 A
Capacitance
VGS - Gate-to-Source Voltage (V)
8
1.6
1.4
6
1.2
4
1.0
2
0.8
0 0 7 14 21 28 35
0.6 - 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
50 0.05
On-Resistance vs. Junction Temperature
TJ = 150 °C 10
R DS(on) - On-Resistance (Ω)
0.04
I S - Source Current (A)
0.03
0.02 ID = 16 A 0.01
TJ = 25 °C
1 0.00 0.2 0.4 0.6 0.8 1.0 1.2
0.00 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71919 S-80438-Rev. E, 03-Mar-08
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S.