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Si7388DP Dataheets PDF



Part Number Si7388DP
Manufacturers Vishay
Logo Vishay
Description Fast Switching MOSFET
Datasheet Si7388DP DatasheetSi7388DP Datasheet (PDF)

Si7388DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.007 at VGS = 10 V 0.010 at VGS = 4.5 V ID (A) 19 15 FEATURES • Halogen-free available • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested RoHS COMPLIANT PowerPAK SO-8 APPLICATIONS • DC/DC Synchronous Rectifier 6.15 mm S 1 2 3 S S 5.15 mm G 4 D D 8 7 6 5 D D D G Bottom View Ordering Information: Si7388DP-T1-E3 .

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Si7388DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.007 at VGS = 10 V 0.010 at VGS = 4.5 V ID (A) 19 15 FEATURES • Halogen-free available • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested RoHS COMPLIANT PowerPAK SO-8 APPLICATIONS • DC/DC Synchronous Rectifier 6.15 mm S 1 2 3 S S 5.15 mm G 4 D D 8 7 6 5 D D D G Bottom View Ordering Information: Si7388DP-T1-E3 (Lead (Pb)-free) Si7388DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 s Steady State 30 ± 20 12 9 ± 50 1.6 1.9 1.2 - 55 to 150 260 Unit V 19 15 4.1 5 3.2 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Steady State Symbol RthJA RthJC Typical 20 55 2.0 Maximum 25 65 2.6 Unit °C/W Notes: a. Surface Mounted on 1” x 1” FR4 board. b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71919 S-80438-Rev. E, 03-Mar-08 www.vishay.com 1 Si7388DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 3 A, di/dt = 100 A/µs VDD = 15 V, RL = 15 Ω ID ≅ 1.0 A, VGEN = 10 V, RG = 6 Ω 0.5 14 10 44 20 40 VDS = 15 V, VGS = 5.0 V, ID = 19 A 16.3 4 5.9 2.2 20 15 70 30 70 ns Ω 24 nC a Symbol VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD Test Conditions VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 12 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 70 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 19 A VGS = 4.5 V, ID = 15 A VDS = 15 V, ID = 19 A IS = 4.1 A, VGS = 0 V Min. 0.80 Typ. Max. 1.6 ± 100 1 5 Unit V nA µA A 40 0.0058 0.008 40 0.75 1.1 0.007 0.010 Ω S V Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 VGS = 10 thru 3 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 30 30 20 20 TC = 125 °C 10 25 °C - 55 °C 10 1V 0 0 2 4 6 8 10 2V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com 2 Document Number: 71919 S-80438-Rev. E, 03-Mar-08 Si7388DP Vishay Siliconix TYPICAL CHARACTERISTICS 0.020 25 °C, unless otherwise noted 2500 R DS(on) - On-Resistance (Ω) 0.016 C - Capacitance (pF) 2000 Ciss 1500 0.012 VGS = 4.5 V 0.008 VGS = 10 V 0.004 1000 Coss 500 Crss 0.000 0 10 20 30 40 50 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 VDS = 15 V ID = 16 A R DS(on) - On-Resistance (Normalized) 1.8 VGS = 10 V ID = 16 A Capacitance VGS - Gate-to-Source Voltage (V) 8 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 7 14 21 28 35 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge 50 0.05 On-Resistance vs. Junction Temperature TJ = 150 °C 10 R DS(on) - On-Resistance (Ω) 0.04 I S - Source Current (A) 0.03 0.02 ID = 16 A 0.01 TJ = 25 °C 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71919 S-80438-Rev. E, 03-Mar-08 www.vishay.com 3 S.


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