Power F-MOS FETs
2SK2572
2SK2572(Tentative)
Silicon N-Channel Power F-MOS
s Features
q Avalanche Unit : mm
15.5±0.5 3....
Power F-MOS FETs
2SK2572
2SK2572(Tentative)
Silicon N-Channel Power F-MOS
s Features
q Avalanche Unit : mm
15.5±0.5 3.0±0.3
energy capability guaranteed
4.5
q High-speed q Low q No
switching
ø3.2±0.1
10.0
26.5±0.5
ON-resistance
5˚
5˚
2.0 1.2
secondary breakdown
4.0 2.0±0.2 1.1±0.1
2.0
q Non-contact q Solenoid q Motor
relay
18.6±0.5
s Applications
drive
5˚
5˚ 5˚
0.7±0.1
5.45±0.3
5.45±0.3
3.3±0.3 0.7±0.1
q Control
equipment mode
regulator
5˚
q Switching
1
2
3
2.0
5.5±0.3
drive
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse TC = 25˚C Ta= 25˚C Symbol VDSS VGSS ID IDP EAS * PD Tch Tstg Rating 500 ±20 ±15 ±30 11.25 100 3 150 –55 to +150 Unit V V A A mJ W ˚C ˚C
1 : Gate 2 : Drain 3 : Source TOP-3E Package
Avalanche energy capability Allowable power dissipation Channel temperature Storage temperature
* L= 0.1mH, IL =15A, 1 pulse
s Electrical Characteristics (Tc = 25˚C)
Parameter Drain-Source cut-off current Gate-Source leakage current Drain-Source breakdown voltage Gate threshold voltage Drain-Source ON-resistance Forward transadmittance Diode forward voltage Input capacitance Output capacitance Feedback capacitance Turn-on time Fall time Turn-off time (delay time) Channel-Case heat resistance Channel-Atmosphere heat resistance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Ciss Coss Crss ton tf td(off) Rth(ch-c) Rth(ch-a) VDD.= .150V, ID= 8A VGS=10V, RL=19Ω VDS= 20V, VGS...
