Si7483ADP

Si7483ADP Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0057 at VGS = - 10 V 0.0095 at VGS = - 4.5 V ID (A) - 24 - 17 FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFETS New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile 100 % Rg tested APPLICATIONS PowerPAK SO-8 Battery and Load Switching - Notebook Computers - Notebook Battery Packs 5.15 mm S 3 4 G 6.15 mm S 1 2 S S D 8 7 6 5 D D D G Bottom View Ordering Information: Si7483ADP-T1-E3 (Lead (Pb)-free) Si7483ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation a Symbol VDS VGS TA = 25 °C TA = 70 °C ID IDM IS TA = 25 °C TA = 70 °C PD TJ, Tstg 10 s - 24 - 19 - 4.5 5.4 3.4 Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c Steady State - 30 ± 20 - 14 - 11 - 60 - 1.6 1.9 1.2 - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Steady State Symbol RthJA RthJC Typical 18 50 1.0 Maximum 23 65 1.5 Unit °C/W Notes a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 i...