Document
Si7840DP
New Product
Vishay Siliconix
N-Channel 30-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
30
FEATURES
ID (A)
18 15
rDS(on) (W)
0.0095 @ VGS = 10 V 0.014 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile
APPLICATIONS
D DC/DC Converters D Optimized for “High-Side” Synchronous Rectifier Operation
PowerPAKt SO-8
D
6.15 mm
S 1 2 3 S S
5.15 mm
G 4
G
D 8 7 6 5 D D D
S N-Channel MOSFET Bottom View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
10 secs
30 "20 18
Steady State
Unit
V
11 8 40 A 1.6 40 80 mJ 1.9 1.2 –55 to 150 W _C
ID IDM IS IAS EAS
14
4.1
5.0 PD TJ, Tstg 3.2
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71624 S-05804—Rev. C, 25-Feb-02 www.vishay.com Steady State Steady State RthJA RthJC
Symbol
Typical
20 52 2.1
Maximum
25 65 2.6
Unit
_C/W
1
Si7840DP
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 18 A VGS = 4.5 V, ID = 15 A VDS = 15 V, ID = 18 A IS = 4.1 A, VGS = 0 V 30 0.0077 0.0115 40 0.75 1.2 0.0095 0.014 S V 1.0 "100 1 5 V nA mA A W
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = 4.1 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 5.0 V, ID = 18 A 15.5 3.8 6 0.8 17 14 39 19 50 26 21 60 30 80 ns W 23 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40 VGS = 10 thru 4 V 32 I D – Drain Current (A) I D – Drain Current (A) 32 40
Transfer Characteristics
24
3V
24
16
16 TC = 125_C 8 25_C –55_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5
8
0 0 2 4 6 8 10
0 0.0
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
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Document Number: 71624 S-05804—Rev. C, 25-Feb-02
Si7840DP
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.020 2500
Vishay Siliconix
Capacitance
r DS(on) – On-Resistance ( W )
0.016 C – Capacitance (pF) VGS = 4.5 V 0.012 VGS = 10 V 0.008
2000 Ciss 1500
1000
Coss
0.004
500
Crss
0.000 0 8 16 24 32 40
0 0 4 8 12 16 20
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
Gate Charge
10 V GS – Gate-to-Source Voltage (V) VDS = 15 V ID = 18 A 1.8
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 18 A
r DS(on) – On-Resistance ( W) (Normalized) 12 18 24 30
8
1.6
1.4
6
1.2
4
1.0
2
0.8
0 0 6
0.6 –50
–25
0
25
50
75
100
125
150
Qg – Total Gate Charge (nC)
TJ – Junction Temperature (_C)
Source-Drain Diode Forward Voltage
0.05 40 0.04
On-Resistance vs. Gate-to-Source Voltage
r DS(on) – On-Resistance ( W )
I S – Source Current (A)
10
TJ = 150_C
ID = 18 A 0.03
0.02
TJ = 25_C
0.01
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
Document Number: 71624 S-05804—Rev. C, 25-Feb-02
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Si7840DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4 0.2 –0.0 Power (W) –0.2 –0.4 –0.6 40 –0.8 –1.0 –50 0 –25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ – Temperature (_C) 120 ID = 250 mA 160 V GS(th) Variance (V) 200
Single Pulse Power, Juncion-To-Ambient
80
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05 0.02
t1 t2 1. Duty Cycle, D = t1 t2 PDM
2. Per Unit Base = RthJA = 68_C/W
Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec)
3. TJM – TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Case
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse
0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10
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Document Number: 71624 S.