IRF5803PbF

PD-95262B IRF5803PbF HEXFET® Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free D D VDSS -40V RDS(on) max (mW) 112@VGS = -10V 190@VGS = -4.5V ID -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and R DS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. 1 6 A D 2 5 D G 3 4 S Top View TSOP-6 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -40 -3.4 -2.7 -27 2.0 1.3 16 ± 20 -55 to + 150 Units V A W mW/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Max. 62.5 Units °C/W www.irf.com 1 04/20/...