Power MOSFET
PD - 96029
IRF5800PbF
HEXFET® Power MOSFET
l l l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Availabl...
Description
PD - 96029
IRF5800PbF
HEXFET® Power MOSFET
l l l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free
D
1
6
A D
VDSS = -30V
D
2 5
D
G
3
4
S
RDS(on) = 0.085Ω
Top View
Description
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
TSOP-6
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-30 -4.0 -3.2 -32 2.0 1.3 0.016 20.6 ± 20 -55 to + 150
Units
V A W W/°C mJ V °C
Thermal Resistance
Parameter
RθJA Maximum Junction-to-Ambient
Max.
62.5
Units
°C/W
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1
08/31/05
IRF5800PbF
Electrical Charac...
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