barrier diode. YG865C10R Datasheet

YG865C10R Datasheet PDF, Equivalent


Part Number

YG865C10R

Description

Low IR Schottky barrier diode

Manufacture

Fuji

Total Page 3 Pages
PDF Download
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YG865C10R Datasheet
YG865C10R (100V / 20A)
Low IR Schottky barrier diode
[200509]
Outline drawings, mm
Features
Low IR
Low VF
Center tap connection
Applications
High frequency operation
DC-DC converters
AC adapter
Package : TO-220F
Epoxy resin UL : V-0
Connection diagram
1 23
Maximum ratings and characteristics
Maximum ratings
Item
Symbol
Conditions
Rating
Unit
Repetitive peak surge reverse voltage VRSM
tw=500ns, duty=1/40
100
V
Repetitive peak reverse voltage
VRRM
100 V
Isolating voltage
Average output current
Non-repetitive surge current
Viso
Io
IFSM
Terminals-to-Case, AC.1min.
Square wave, duty=1/2
Tc=103°C
Sine wave 10ms
1500
20 *
145
V
A
A
non-repetitive reverse surge power dissipation PRM
tw=10µs, Tj=25°C
660
W
Operating junction temperature
Tj
+150
°C
Storage temperature
Tstg
-40 to +150
°C
* Out put current of center tap full wave connection
Electrical characteristics (at Ta=25°C Unless otherwise specified )
Item
Forward voltage **
Reverse current **
Thermal resistance
Symbol
VF
IR
Rth(j-c)
Conditions
IF=10A
VR=100V
Junction to case
Max.
0.86
175
2.5
Unit
V
µA
°C/W
**Rating per element
Mechanical characteristics
Mounting torque
Approximate mass
http://www.fujielectric.co.jp/fdt/scd/
Recommended torque
0.3 to 0.5
2
N·m
g

YG865C10R Datasheet
(100V / 20A )
Characteristics
Forward Characteristic (typ.)
10
Tj=150oC
Tj=125oC
Tj=100oC
Tj=25oC
1
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VF Forward Voltage (V)
Forward Power Dissipation (max.)
16
Io
14 111122223333444455556666777788889999000011112222333344445555
λ
12 360 º
10 Square wave λ=60o
Square wave λ=120o
Sine wave λ=180o
8 Square wave λ=180o
DC
6
4
2
Per 1element
0
0 2 4 6 8 10 12
Io Average Output Current (A)
YG865C10R (20A)
Reverse Characteristic (typ.)
Tj=150oC
101 Tj=125oC
Tj=100oC
100
10-1
Tj= 25oC
10-2
10-3
10-4
0
10 20 30 40 50 60 70 80 90 100 110 120
VR Reverse Voltage (V)
Reverse Power Dissipation (max.)
8
360 º
6 VR 11111111222222223333333344444444 11111111222222223333333344444444
DC
α
4
α=180o
2
0
0 20 40 60 80 100 120
VR Reverse Voltage (V)
Current Derating (Io-Tc) (max.)
160
150
140
130
120
DC
110
100
90
360 º
80
λ
70
60
111222333444555666777888Io999000111222333444555
VR=50V
SSqinueawreawveavλe=1λ8=01o80o
Square wave λ=120o
Square wave λ=60o
50
0
5 10 15 20 25 30
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Junction Capacitance Characteristic (max.)
1000
100
10
1 10 100 1000
VR Reverse Voltage (V)


Features Datasheet pdf YG865C10R (100V / 20A) Low IR Schottky b arrier diode Features Low IR Low VF Cen ter tap connection [200509] Outline d rawings, mm Applications High frequenc y operation DC-DC converters AC adapter Package : TO-220F Epoxy resin UL : V-0 Connection diagram 1 2 3 Maximum ratings and characteristics Maximum rat ings Item Repetitive peak surge reverse voltage Repetitive peak reverse voltag e Isolating voltage Average output curr ent Non-repetitive surge current non-re petitive reverse surge power dissipatio n Symbol VRSM VRRM Viso Io IFSM PRM Tj Tstg Conditions tw=500ns, duty=1/40 Rating 100 100 Unit V V V * A A W °C °C Terminals-to-Case, AC.1min. Square wave, duty=1/2 Tc=103°C 1500 20 145 660 +150 -40 to +150 Sine wave 10ms tw =10µs, Tj=25°C Operating junction te mperature Storage temperature * Out pu t current of center tap full wave conne ction Electrical characteristics (at T a=25°C Unless otherwise specified ) It em Forward voltage ** Reverse current ** Thermal resistance Symbol VF.
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