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YG865C10R

Fuji

Low IR Schottky barrier diode

YG865C10R (100V / 20A) Low IR Schottky barrier diode Features Low IR Low VF Center tap connection [200509] Outline dra...


Fuji

YG865C10R

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Description
YG865C10R (100V / 20A) Low IR Schottky barrier diode Features Low IR Low VF Center tap connection [200509] Outline drawings, mm Applications High frequency operation DC-DC converters AC adapter Package : TO-220F Epoxy resin UL : V-0 Connection diagram 1 2 3 Maximum ratings and characteristics Maximum ratings Item Repetitive peak surge reverse voltage Repetitive peak reverse voltage Isolating voltage Average output current Non-repetitive surge current non-repetitive reverse surge power dissipation Symbol VRSM VRRM Viso Io IFSM PRM Tj Tstg Conditions tw=500ns, duty=1/40 Rating 100 100 Unit V V V * A A W °C °C Terminals-to-Case, AC.1min. Square wave, duty=1/2 Tc=103°C 1500 20 145 660 +150 -40 to +150 Sine wave 10ms tw=10µs, Tj=25°C Operating junction temperature Storage temperature * Out put current of center tap full wave connection Electrical characteristics (at Ta=25°C Unless otherwise specified ) Item Forward voltage ** Reverse current ** Thermal resistance Symbol VF IR Rth(j-c) Conditions IF=10A VR=100V Junction to case Max. 0.86 175 2.5 Unit V µA °C/W **Rating per element Mechanical characteristics Mounting torque Approximate mass http://www.fujielectric.co.jp/fdt/scd/ Recommended torque 0.3 to 0.5 2 N·m g (100V / 20A ) Characteristics Forward Characteristic (typ.) 10 1 YG865C10R (20A) Reverse Characteristic (typ.) Tj=150 C Tj=125 C Tj=100 C 10 0 o o o IF Forward Current (A) 10 Tj=150 C o Tj=125 C o Tj=100 C Tj=25 C 1 o o IR Reverse Current (mA) ...




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