SSM4953

SSM4953 Dual P-Channel Enhancement Mode MOSFET Product Summary VDS (V) -30V SO-8 8 7 6 5 ID (A) -4.5A RDS(ON) (mΩ) Max 60 @VGS = -10V 1 95 @VGS = -4.5V 2 3 4 D1 (7, 8) D2 (5, 6) FEATURES Super high density cell design for low R DS(ON). Rugged and reliable. SO-8 package. Pb free. G1 (2) S1(1) G2 (4) S2(3) ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -30 + - 20 -4.5 -23 -1.7 2 -55 to 150 Unit V V A A A W o Drain-Source Diode Forward Current Maximum Power Dissipation a IS PD TJ, TSTG Operating Junction and Storage Temperature Range C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 62.5 o C/W South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea Semiconductor, January 2008 (Rev 3.0) 1 SSM4953 P-Channel Electrical Characteristics (TA = 25 C unless otherwise noted) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward Voltage o Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gF...