SSS5N20

SSS5N20 Dual N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 30 @VGS = 4.5V 20V 4A 45 @VGS = 2.5V D1 (2, 5) 1 TSOP-6 D2 (2, 5) FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Surface Mount package. G1(6) S1(1) G2(4) S2(3) ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit 20 + - 10 4 25 2 1.25 -55 to 150 Unit V V A A A W o Drain-Source Diode Forward Current Maximum Power Dissipation a IS PD TJ, TSTG Operating Junction and Storage Temperature Range C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 100 o C/W South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea Semiconductor, October 2005 (Rev 2.1) 1 SSS5N20 Electrical Characteristics (TA = 25 C unless otherwise noted) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward Voltage o Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) Condition VGS=0V, ID=250 A Min 20 Typ c Max Unit V VDS=16V, VGS=0V VGS...