AO4948

AO4948 30V Dual N-Channel MOSFET SRFET General Description The AO4948 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. TM Product Summary FET1(N-Channel) VDS= 30V ID= 8.8A (VGS=10V) RDS(ON) < 16mΩ (VGS=10V) < 22mΩ (VGS=4.5V) FET2(N-Channel) 30V 8A (VGS=10V) RDS(ON) < 19mΩ (VGS=10V) < 28mΩ (VGS=4.5V) ESD Protected 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View Top View S1 G1 S2 G2 D1 D1 D2 D2 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode D1 D2 G2 G1 S1 S2 Pin1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Max FET1 Drain-Source Voltage VDS 30 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy L=0.3mH Power Dissipation B C Max FET2 30 ±20 8 6.5 40 13 25 2 1.3 Units V V A A mJ W ° C VGS TA=25° C TA=70° C C ±20 8.8 7.1 60 21 66 2 1.3 -55 to 150 ID IDM IAS, IAR EAS, EAR PD TJ, TSTG TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 32 Max 62.5 90 40 Units ° C/W ° C/W ° C/W Rev 3: Dec 2...