4946

Shenzhen TuoFeng Semiconductor Technology co., LTD 4946 Dual N-Channel High Density Trench MOSFET PRODUCT SUMMARY VDSS ID FEATURES RDS(on) (mΩ) Max 52 @ VGS = 10V P ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package. 5.0A 60V 4.0A 75 @ VGS = 4.5V P D1 D2 SOP-8 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 S1 S2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA = 25 °C -Pulse b Drain-Source Diode Forward Current Maximum Power Dissipation a a a Symbol VDS VGS ID IDM IS PD Limit 60 ± 20 5.0 26 3.1 2.0 1.2 Unit V V A A A W TA=25ºC TA=75ºC Avalanche Energy with Single Pulse L=0.1mH EAS TJ,TSTG 11 - 55 to 150 mJ °C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient Note a. Surface Mounted on FR4 Board , t ≤ 10sec . b. Pulse width limited by maximum junction temperature. a RthJA 62.5 °C/W ： 1 Shenzhen Tuofeng Semiconductor Technology co., LTD 4946 ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) Parameter Symbol Condition Min Typc Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS = 0V , ID = 250uA 60 50 ±100 V nA nA Zero Gate Voltage Drain Current Gate-Body Leakage VDS = 60V , VGS = 0V VGS = ±20V , VDS = 0V ON CHARACTERISTICSb Gate Threshold Voltage VGS(th) VDS = VGS , ID = 250uA VGS = 10V , ID = 5.0A P P ...