N-Channel Enhancement Mode Power Mos.FET
SSD408
Elektronische Bauelemente 18A, 30V,RDS(ON)18m£[ N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
...
Description
SSD408
Elektronische Bauelemente 18A, 30V,RDS(ON)18m£[ N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
TO-252
The SSD408 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a load switch or in PWM applications.
Features
* Simple Drive Requirement * Lower On-resistance
* Fast Switching Characteristic
D
REF. A B C D E F S
G
S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.20 2.80 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current
1
Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25
2
Ratings 30 ±20 18 14 70 60 0.4 60 35 -55 ~ +175
Unit V V A A A W W/ mJ A
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy
EAS IAS Tj, Tstg
Single Pulse Avalanche Current
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 2.5 50 Unit /W /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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SSD408
Elektronische Bauelemente ...
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