SSD40N10-30D

SSD40N10-30D Elektronische Bauelemente 26A, 100V, RDS(ON) 36mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free FEATURES Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. TO-252(D-Pack) APPLICATION PoE Power Sourcing Equipment. PoE Powered Devices. Telecom DC/DC converters. White LED boost converters. A B C D GE PACKAGE INFORMATION Package TO-252 MPQ 2.5K Leader Size 13’ inch A B C D E F G H M REF. K HF N O P J Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 2 Drain 1 Gate 3 Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25℃ Pulsed Drain Current 2 1 1 Symbol VDS VGS ID IDM IS PD TJ, TSTG Rating 100 ±20 26 50 50 50 -55 ~ 175 Unit V V A A A W ° C Continuous Source Current (Diode Conduction) Total Power Dissipation @TC=25℃ 1 Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient Maximum Thermal Resistance Junction-Case Notes： 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 RθJA RθJC 50 3.0 ° C /W ° C /W 04-May-2011 Rev.A Page 1 of 4 SSD40...