SSD40P04-20D MOSFET Datasheet

SSD40P04-20D Datasheet, PDF, Equivalent


Part Number

SSD40P04-20D

Description

P-Ch Enhancement Mode Power MOSFET

Manufacture

SeCoS

Total Page 5 Pages
Datasheet
Download SSD40P04-20D Datasheet


SSD40P04-20D
Elektronische Bauelemente
SSD40P04-20D
P-Ch Enhancement Mode Power MOSFET
-36A, -40V, RDS(ON) 30mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize high cell density process.
Low RDS(on) assures minimal power loss and conserves energy, making this
device ideal for use in power management circuitry. Typical applications
are PWMDC-DC converters, power management in portable and battery-powered
products such as computers, printers, battery charger, telecommunication
power system, and telephones power system.
TO-252(D-Pack)
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Miniature TO-252 surface mount package saves board space.
High power and current handling capability.
Extended VGS range (±25) for battery pack applications.
PRODUCT SUMMARY
VDS(V)
-40
PRODUCT SUMMARY
RDS(on) m(
30@VGS= -10V
40@VGS= -4.5V
ID(A)
-36
-29

Gate

Drain

Source
A
B
GE
K HF
MJ
C
D
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.4
6.8 J
2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Total Power Dissipation a
VGS
ID @TA=25
IDM
IS
PD @TA=25
±20
36
±40
-30
50
Operating Junction and Storage Temperature Range TJ, TSTG
-55 ~ 175
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient a
RθJA
50
Maximum Thermal Resistance Junction-Case
RθJC
3.0
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
UNIT
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
14-Jul-2010 Rev.B
Any changes of specification will not be informed individually.
Page 1 of 5

SSD40P04-20D
Elektronische Bauelemente
SSD40P04-20D
P-Ch Enhancement Mode Power MOSFET
-36A, -40V, RDS(ON) 30mΩ
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBO MIN. TYP. MAX. UNIT TEST CONDITIONS
Static
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
-1
-
--
VDS= VGS, ID = -250 μA
- ±100 nA VDS = 0V, VGS= ±25V
Zero Gate Voltage Drain Current
On-State Drain Current a
--
IDSS
--
ID(on) -41 -
-1 VDS= -24V, VGS= 0V
μA
-5 VDS= -24V, VGS=0V, TJ=55°C
- A VDS = -5V, VGS= -10V
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage
RDS(ON)
-
-
- 30
VGS= -10V, ID= -36A
m
- 40
VGS= -4.5V, ID= -29A
gfs - 31 - S VDS= -15V, ID= -36A
VSD - -0.7
Dynamic b
-
V IS= -41 A, VGS= 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
- 13.9 -
- 5.2 -
VDS = -15 V
nC VGS = -4.5 V
Qgd - 5.8 -
ID = -36 A
Ciss - 1583 -
VDS = -15 V
Coss
- 278 -
pF VGS = 0 V
f = 1MHz
Crss - 183 -
Switching
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 15 -
Tr - 12 -
VIDD=D=-4-11A5 V
Td(off)
-
62
-
nS VGEN = -10 V
RL= 15
Tf - 46 -
RG= 6
Notes
a. Pulse testPulse width 300 μs, duty cycle 2.
b. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
14-Jul-2010 Rev.B
Any changes of specification will not be informed individually.
Page 2 of 5


Features SSD40P04-20D Elektronische Bauelemente P -Ch Enhancement Mode Power MOSFET -36A, -40V, RDS(ON) 30mΩ RoHS Compliant Pro duct A suffix of “-C” specifies hal ogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures m inimal power loss and conserves energy, making this device ideal for use in po wer management circuitry. Typical appli cations are PWMDC-DC converters, power management in portable and battery-powe red products such as computers, printer s, battery charger, telecommunication p ower system, and telephones power syste m. TO-252(D-Pack) FEATURES     Low RDS(on) provides higher effic iency and extends battery life. Miniatu re TO-252 surface mount package saves b oard space. High power and current hand ling capability. Extended VGS range (± 25) for battery pack applications. A B C D PRODUCT SUMMARY VDS(V) -40 PRODU CT SUMMARY RDS(on) m( 30@VGS= -10 V 40@VGS= -4.5V K GE HF ID(A) -36 -29  Gate  Drain M J N O P REF. .
Keywords SSD40P04-20D, datasheet, pdf, SeCoS, P-Ch, Enhancement, Mode, Power, MOSFET, SD40P04-20D, D40P04-20D, 40P04-20D, SSD40P04-20, SSD40P04-2, SSD40P04-, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)