SSD40P04-20DE MOSFET Datasheet

SSD40P04-20DE Datasheet, PDF, Equivalent


Part Number

SSD40P04-20DE

Description

P-Ch Enhancement Mode Power MOSFET

Manufacture

SeCoS

Total Page 4 Pages
Datasheet
Download SSD40P04-20DE Datasheet


SSD40P04-20DE
Elektronische Bauelemente
SSD40P04-20DE
-36A , -40V , RDS(ON) 30m
P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low RDS(on)
and to ensure minimal power loss and heat dissipation.
TO-252(D-Pack)
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
TO-252 saves board space.
Fast Switch Speed.
High performance trench technology.
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
A
BC
D
GE
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.35 6.80 J 2.30 REF.
B 5.20 5.50 K 0.64 0.90
C 2.15 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.65
E 6.8 7.5 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.25
H 0.64 1.20
2
Drain
1
Gate
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Drain-Source Voltage
VDS -40
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current @TA=25°C 2
Continuous Source Current (Diode Conduction) 1
Total Power Dissipation @TA=25°C 1
VGS
ID
IDM
IS
PD
±20
-36
-40
-30
50
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 ~ 175
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient 1
RθJA
50
Maximum Thermal Resistance Junction-Case
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJC
3
3
Source
Unit
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
2-Dec-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4

SSD40P04-20DE
Elektronische Bauelemente
SSD40P04-20DE
-36A , -40V , RDS(ON) 30m
P-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Gate-Threshold Voltage
VGS(th)
-1
-
-
V VDS= VGS, ID = -250µA
Gate-Body Leakage
IGSS - - ±100 nA VDS =0, VGS= ±25V
Zero Gate Voltage Drain Current
On-State Drain Current 1
--
IDSS
--
ID(on) -41 -
-1 VDS= -24V, VGS=0
µA
-5 VDS= -24V, VGS=0, TJ=55°C
- A VDS = -5V, VGS= -10V
Drain-Source On-Resistance 1
Forward Transconductance 1
RDS(ON)
gfs
-
-
-
- 30
VGS= -10V, ID= -36A
m
- 40
VGS= -4.5V, ID= -29A
31 -
S VDS= -15V, ID= -36A
Diode Forward Voltage
VSD - -0.7
Dynamic 2
-
V IS= -41A, VGS=0
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - 13.9 30
VDS= -15V
Qgs - 5.2 20 nC VGS= -4.5 V
Qgd - 5.8 20
ID= -36A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
Td(on)
Rise Time
Tr
Turn-off Delay Time
Td(off)
Fall Time
Tf
Notes:
1. Pulse testPulse width 300 µs, duty cycle 2.
2. Guaranteed by design, not subject to production testing.
-
-
-
-
-
-
-
1583
278
183
15
12
62
46
4000
600
400
-
-
-
-
VDS= -15V,
pF VGS=0,
f=1MHz
VDD= -15V
ID= -41A
nS VGEN = -10 V
RL=15
RG=6
http://www.SeCoSGmbH.com/
2-Dec-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4


Features SSD40P04-20DE Elektronische Bauelemente -36A , -40V , RDS(ON) 30mΩ P-Ch Enhan cement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniat ure surface mount MOSFETs utilize a hig h cell density trench process to provid e low RDS(on) and to ensure minimal pow er loss and heat dissipation. TO-252(D -Pack) FEATURES Low RDS(on) provides h igher efficiency and extends battery li fe. Low thermal impedance copper leadfr ame TO-252 saves board space. Fast Swit ch Speed. High performance trench techn ology. A B C D GE K HF APPLICATION DC-DC converters and power management i n portable and battery-powered products such as computers, printers, PCMCIA ca rds, cellular and cordless telephones. N O P M J REF. PACKAGE INFORMATION Package TO-252 MPQ 2.5K Leader Size 13 inch A B C D E F G H Millimeter Min. Max. 6.35 6.80 5.20 5.50 2.15 2.40 0.4 5 0.58 6.8 7.5 2.40 3.0 5.40 6.25 0.64 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.64 0.90 0.5.
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