P-Ch Enhancement Mode Power MOSFET
SSD40P04-20DE
Elektronische Bauelemente -36A , -40V , RDS(ON) 30mΩ P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Pro...
Description
SSD40P04-20DE
Elektronische Bauelemente -36A , -40V , RDS(ON) 30mΩ P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
TO-252(D-Pack)
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TO-252 saves board space. Fast Switch Speed. High performance trench technology.
A B C D
GE
K
HF
APPLICATION
DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
N O P
M
J
REF.
PACKAGE INFORMATION
Package TO-252 MPQ 2.5K Leader Size 13 inch
A B C D E F G H
Millimeter Min. Max. 6.35 6.80 5.20 5.50 2.15 2.40 0.45 0.58 6.8 7.5 2.40 3.0 5.40 6.25 0.64 1.20
REF.
J K M N O P
Millimeter Min. Max. 2.30 REF. 0.64 0.90 0.50 1.1 0.9 1.65 0 0.15 0.43 0.58
2
Drain
1
Gate
3
Source
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
1 2 1
Symbol
VDS VGS ID IDM IS PD TJ, TSTG
Ratings
-40 ±20 -36 -40 -30 50 -55 ~ 175
Unit
V V A A A W ° C
Pulsed Drain Current @TA=25° C
Continuous Source Current (Diode Conduction) Total Power Dissipation @TA=25° C
1
Operating Junction and Storage Temperature Range
Thermal Resistance Ratings
Ma...
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