DatasheetsPDF.com

SSD3030P Dataheets PDF



Part Number SSD3030P
Manufacturers South Sea Semiconductor
Logo South Sea Semiconductor
Description P-Channel Enhancement Mode MOSFET
Datasheet SSD3030P DatasheetSSD3030P Datasheet (PDF)

P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 25 @VGS = -10V -30V -30A 45 @VGS = -5V 55 @VGS = -4.5V G S D SSD3030P TO-252 D FEATURES Super high density cell design for low RDS(ON) . Rugged and reliable. TO-252 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -30 + - 25 -30 -60 -1.7 50 -55.

  SSD3030P   SSD3030P


Document
P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 25 @VGS = -10V -30V -30A 45 @VGS = -5V 55 @VGS = -4.5V G S D SSD3030P TO-252 D FEATURES Super high density cell design for low RDS(ON) . Rugged and reliable. TO-252 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -30 + - 25 -30 -60 -1.7 50 -55 to 150 Unit V V A A A W o Drain-Source Diode Forward Current Maximum Power Dissipation a IS PD TJ, TSTG Operating Junction and Storage Temperature Range C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient a R R JC JA 3 50 o C/W South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea Semiconductor, January 2008 (Rev 2.1) 1 SSD3030P P-Channel Electrical Characteristics (TA = 25 C unless otherwise noted) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage o Symbol BVDSS IDSS IGSS VGS(th) Condition VGS=0V, ID=-250 A Min -30 Typ c Max Unit V VDS=-24V, VGS=0V VGS= 25V, VDS=0V A -1 -1.9 -1 100 -2.5 25 45 55 -40 15 1000 200 110 17.6 17.4 169 95.4 20 11 3.5 6 -0.75 -1.2 25 150 1200 A nA V m VDS=VGS ID=-250 VGS=-10V, ID=-20A Drain-Source On-State Resistance RDS(ON) VGS= - 5V, ID = -10A VGS=-4.5V, ID=-10A On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward Voltage ID(ON) gFS CISS COSS CRSS tD(ON) tr tD(OFF) tf Qg Qgs Qgd VSD VDS=-5V, VGS=-10V VDS=-5V, ID=-5.3A VDS=-15V VGS=0V f=1.0MHz VDD=-15V, ID=-1A, VGEN=-10V, RGEN=6 , A S PF ns VDS=-15V, ID= - 8A, VGS = -10V VDS=-15V, ID= - 8A, VGS = -4.5V VDS= -15V, ID= -6A, VGS= -10V VGS=0V, ID= -1A nC V Notes a. Surface Mounted on FR4 Board, t <10 - sec. b. Pulse Test Pulse Width < 300 s, Duty Cycle < - 2%. c. Guaranteed by design, not subject to production testing. South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea Semiconductor, January 2008 (Rev 2.1) 2 SSD3030P 10 8 -VGS = 4V 25 Tj = 125 C o 25 C o -55 C o -ID, Drain Current (A) -VGS = 10, 9, 8, 7, 6, 5V 6 -ID, Drain Current (A) -VGS = 3V 20 15 4 10 2 5 0 0 2 4 6 8 10 12 0 0 0.6 1.0 1.4 1.8 2.2 2.6 -VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 1200 Figure 2. Transfer Characteristics 1.8 VGS = -10V ID = -8A Ciss 800 600 400 200 0 0 5 RDS(ON), On-Resistance Normalized ( ) 30 1000 C, Capacitance (pF) 1.6 1.4 1.2 1.0 0.8 0.6 Coss Crss 10 15 20 25 -55 -25 0 25 50 75 100 125 -VDS, Drain-to-Source Voltage (V) Tj, Junction Tempertature ( O C) Figure 3. Capacitance 1.3 Figure 4. On-Resistance Variation with Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 ID = -250 A 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 o Vth, Normalized Gate-Source Threshold Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS = VGS ID = -250 A Tj, Junction Temperature ( C) o -25 0 25 50 75 100 125 125 Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea Semiconductor, January 2008 (Rev 2.1) 3 SSD3030P 20 20.0 -IS, Source-Drain Current (A) gFS, Transconductance (S) VGS = 0V 10.0 16 12 8 4 VDS = -15V 0 0 5 10 15 20 1.0 0.2 0.4 0.6 0.8 1.0 1.2 -IDS, Drain-Source Current (A) -VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 10 Figure 8. Body Diode Forward Voltage Variation with Source Current 100 100µs 1ms -VGS, Gate to Source Voltage (V) -ID, Drain Current (A) 8 VDS = -15V ID = -8A 10 RDS(ON) LIMIT 10ms 6 1 VGS = 10V SINGLE PULSE RθJA = 96oC/W TA = 25oC DC 1 10s 100ms 4 2 0.1 0 0 3 0.01 Qg, Total Gate Charge (nC) 6 9 12 15 18 21 24 0.01 0.10 1.00 -VSD, Drain-to-Source Voltage (V) 10.00 100.00 Figure 9. Gate Charge Figure 10. Maximum Safe Operating Area South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea Semiconductor, January 2008 (Rev 2.1) 4 SSD3030P VDD VIN VGS RGEN G S VIN 50% 10% 50% ton td(on) tr 90% toff td(off) 90% 10% RL D VOUT tf VOUT 10% 90% INVERTED PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms 1 D = 0.5 r(t), Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 RθJA(t) = r(t) * R.


SSD2030P SSD3030P SSD70N03-04D


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)