AP9566GH

AP9566GH RoHS-compliant Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID -40V 65mΩ -13.6A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-252(H) The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -40 +20 -13.6 -8.6 -50 20.8 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance Junction-ambient Value 6.0 110 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200806161 AP9566GH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-10A VGS=-4.5V, ID=-6A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(of...