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MRF450 Dataheets PDF



Part Number MRF450
Manufacturers New Jersey Semi-Conductor
Logo New Jersey Semi-Conductor
Description RF POWER TRANSISTORS
Datasheet MRF450 DatasheetMRF450 Datasheet (PDF)

, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF450 MRF450A The RF Line SOW -30 MHz RF POWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS NPN SILICON . . . designed for power amplifier applications in industrial, commercial and amateur radio equ ipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics Output Power = 50 Watts Minimum Gain = 1 1 dB Efficiency = 50% MAXIMUM RATINGS RaiMf^ Colllctor-E miner Voltege.

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, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF450 MRF450A The RF Line SOW -30 MHz RF POWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS NPN SILICON . . . designed for power amplifier applications in industrial, commercial and amateur radio equ ipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics Output Power = 50 Watts Minimum Gain = 1 1 dB Efficiency = 50% MAXIMUM RATINGS RaiMf^ Colllctor-E miner Voltege Collectorsaxe Voltage Emitter-Ba x voltage Collector Current — Continuous Total Device Oi»ipeJion $ TC - 2S°C Derate above 2S°C Storage Temperature flange Syitfeal Vv^L —L~ ..i,.. )._ i <&& ^== /^^*~A?2=^ ( \ \s/\s tHriiON wot Max '^ Unit °C/W sm*r ^MSHff i i*s _xi Oil ••_ Hii -f i j -U xJL_j ^^^^""^i L t /•• ', \ Ij V ! r'u.~1Qr"4 1 1 a # cz L' lit i^ IK ^t I '" «om u i a — u-1! 10 pF. ARCO 424 CI, C3. C4 - 170- 780 pF. ARCO 4«9 C5, CS — E RIE 0.1 iLf A 100 V RED CAPS ce— 1000 pf UNELCO. 350 V« 35 Vdc . 2.0 vv Carbon LI —0 15 pN Molded Choke MILLER L2 — FERW3XCUBE. VK200 20 4B L3 — 3 Tuf IS. #14 Bare Tinned Wire. 0.3* (0.791 1.D x 0.38" 10.971 Long u. #20 Enamel Wire. Close Wound on R1 L5-FERR 3XCUBE #56-570-IS/3B. 9 Ferrile Beads, on r Long #20 wire InpuVOutput Connectors — Type N Bo*rd-GIa» Teflon Mounted on t V « 4" « 2" 5EEZAK Bo. X-N^,^^,^-^ oeaisortcwcTOUUKJWrVaMl W snui m'Oina ifu^in *o«un»i Ri-toon ff % . ~T"tS -|- "i:.«r-5 -43"i"4j^? ' ™i " ; jj ,, a «•»• .3 ±E ^SL MRF460A .) . '« ' i _ J Hi?*T« urn I m NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. \ Semi-Conductors encourages customers to verify that datasheets nre current before placing orders. MRF450, MRF450A ELECTRICAL CHARACTERISTICS |TC = 2S°C unte.soinerum nond.1 Ch*ract«ri*tie OFF CHARACTERISTICS Collector Emitter Breakdown Voltage fl c = 100mAdc. IB = 0) Collector-Emitter Breakdown Voltage "C • 20mAdc. VBE =01 Col lector- Bale Breakdown Voltage ilC • 20mAdc. If - 01 Emitter Base Breakdown Volta»e IIE - lOmAdc, lc - 01 ON CHARACTERISTICS DC Current Gain (1C - VOAdc. VCE • 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Caoacitance IV C B - 15 Vd£. IE -O.I- 1.0 MHi) FUNCTIONAL TESTS (Figura 1) Com.


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