SSM3K128TU

SSM3K128TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K128TU ○ High-Speed Switching Applications ○ Power Management Switch Applications 4.0V drive Low ON-resistance : Ron = 360mΩ (max) (@VGS = 4.0V) 0.65±0.05 2.1±0.1 1.7±0.1 UNIT: mm : Ron = 217mΩ (max) (@VGS = 10V) 2.0±0.1 1 3 Absolute Maximum Ratings (Ta = 25˚C) Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature DC Pulse Symbol VDSS VGSS ID IDP PD (Note1) Tch Tstg Rating 30 ±20 1.5 3.0 500 150 −55~150 Unit 2 V A mW °C °C 0.7±0.05 V UFM JEDEC JEITA TOSHIBA 1. Gate 2. Source 3. Drain ― ― Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2) 2-2U1A Weight: 6.6mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching time Turn-on time Turn-off time Symbol V (BR) DSS IDSS IGSS Vth ⏐Yfs⏐ RDS (ON) Ciss Coss Crss Qg Qgs Qgd ton toff VDSF VDS = 15 V, ID = 1.5 A VGS = 10 V VDD = 15 V, ID = 0.6 A, VGS = 0~4.0 V, RG = 10 Ω ID = -1.5 A, VGS = 0 V (Note2) VDS = 15 V, VGS = 0 V, f = 1 MHz Test Condition ID = 1 mA, VGS = 0 V VDS = 30 V, VGS = 0 V VGS = ±16 V, VDS = 0 V VDS = 5 V, ID = 1 mA VDS = 5 V, ID = 0.6 A ID...