SSM6K407TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K407TU
○ DC−DC Converter, Relay Drive and Mo...
SSM6K407TU
TOSHIBA Field-Effect
Transistor Silicon N-Channel MOS Type
SSM6K407TU
○ DC−DC Converter, Relay Drive and Motor Drive Applications
Unit: mm
2.1±0.1 1.7±0.1
+0.1 0.3-0.05
2.0±0.1 1.3±0.1 0.65 0.65
z 4V drive z Low ON-resistance
: Ron = 440mΩ (max) (@VGS = 4 V) : Ron = 300mΩ (max) (@VGS = 10 V)
1
6
2
5
3
4
0.166±0.05
0.7±0.05
Absolute Maximum Ratings (Ta = 25℃) (Note)
Characteristic
Drain–source voltage Gate–source voltage
Drain current
Drain power dissipation Channel temperature Storage temperature
DC Pulse
Symbol
Rating
VDSS VGSS
ID IDP PD (Note1) Tch Tstg
60 ±20
2 6 500 150 −55 to 150
Unit V V
A
mW °C °C
UF6
1,2,5,6 : Drain
3
: Gate
4
: Source
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-2T1D
Weight: 7mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
Start of commercial production
2008-01
1
2014-03-01
Electrical Charac...