SSM3K324R

MOSFETs Silicon N-Channel MOS SSM3K324R 1. Applications Power Management Switches DC-DC Converters 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 72 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 109 mΩ (max) (@VGS = 1.8 V) 3. Packaging and Pin Assignment SOT-23F SSM3K324R 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-10 2021-09-14 Rev.3.0 SSM3K324R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 30 V VGSS ± 12 Drain current (DC) (Note 1) ID 4.0 A Drain current (pulsed) (Note 1), (Note 2) IDP 10 Power dissipation Power dissipation Channel temperature (Note 3) PD (t ≤ 10 s) (Note 3) PD Tch 1 W 2 150 � Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test repo...