SSM3K333R

MOSFETs Silicon N-Channel MOS (U-MOS�-H) SSM3K333R 1. Applications Power Management Switches High-Speed Switching 2. Features (1) 4.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 28 mΩ (max) (@VGS = 10 V) 3. Packaging and Pin Assignment SOT-23F SSM3K333R 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-10 2021-10-22 Rev.1.0 SSM3K333R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 30 V VGSS ±20 V Drain current (DC) (Note 1) ID 6.0 A Drain current (pulsed) (Note 1), (Note 2) IDP 12.0 Power dissipation (Note 3) PD 1 W Power dissipation (t = 10 s) (Note 3) 2 Channel temperature Storage temperature Tch 150 � Tstg -55 to 150 � Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc...