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SSM3K336R

Silicon N-Channel MOSFET

Description

MOSFETs Silicon N-Channel MOS SSM3K336R 1. Applications Power Management Switches DC-DC Converters 2. Features (1) 4.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 95 mΩ (max) (@VGS = 10 V) RDS(ON) = 140 mΩ (max) (@VGS = 4.5 V) 3. Packaging and Internal Circuit SOT-23F SSM3K336R 1. Gate 2. Source 3. Drain ©2021 1 Toshiba Elect...

Toshiba Semiconductor

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