SSM6L39TU

SSM6L39TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L39TU ○ Power Management Switch Applications ○ High-Speed Switching Applications N-ch: 1.5-V drive P-ch: 1.8-V drive 0.65 0.65 2.0±0.1 2.1±0.1 1.7±0.1 Unit: mm Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating 20 ±10 1.6 3.2 Unit V V A 0.7±0.05 Q1 Absolute Maximum Ratings (Ta = 25°C) 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1 Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating −20 ±8 −1.5 −3 Unit V V A UF6 JEDEC JEITA TOSHIBA ― ― 2-2T1B Weight: 7.0 mg (typ.) Absolute Maximum Ratings (Ta = 25 °C) (Q1, Q2 Common) Characteristics Drain power dissipation Channel temperature Storage temperature range Symbol PD(Note 1) Tch Tstg Rating 500 150 −55 to 150 Unit mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test rep...