SSM6N55NU

SSM6N55NU MOSFETs Silicon N-Channel MOS SSM6N55NU 1. Applications Power Management Switches DC-DC Converters 2. Features (1) (2) 4.5V gate drive voltage. Low drain-source on-resistance : RDS(ON) = 46 mΩ (max) (@VGS = 10 V) RDS(ON) = 64 mΩ (max) (@VGS = 4.5 V) 3. Packaging and Pin Configuration 1. Source1 2. Gate1 3. Drain2 4. Source2 5. Gate2 6. Drain1 UDFN6 Start of commercial production 1 2011-11 2014-04-04 Rev.2.0 SSM6N55NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) (Q1,Q2 Common) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Channel temperature Storage temperature t ≤ 10 s (Note 1) (Note 1), (Note 2) (Note 3) (Note 3) Symbol VDSS VGSS ID IDP PD PD Tch Tstg Rating 30 ±20 4.0 10 1 2 150 -55 to 150 W W  A Unit V Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does ...