SSM6E03TU

SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU Power Management Switch Applications Unit: mm P-channel MOSFET and 1.8 V drive N-channel MOSFET and 1.5 V drive P-channel MOSFET and N-channel MOSFET incorporated into one package. 0.65 0.65 2.0±0.1 1.3±0.1 2.1±0.1 1.7±0.1 +0.1 0.3-0.05 Low power dissipation due to P-channel MOSFET that features low RDS (ON) and low-voltage operation 1 2 3 6 5 4 Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 1) Rating −20 ±8 -1.8 -3.6 Unit V V A 0.7±0.05 Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 1) Rating 20 ± 10 0.1 0.2 Unit V V A 1.Nch source 2.Pch drain 3.Pch drain UF6 JEDEC JEITA TOSHIBA 4.Pch source 5.Nch gate 6.Pch gate Nch drain 2-2T1D Absolute Maximum Ratings (Q1, Q2 common) (Ta = 25°C) Characteristics Drain power dissipation Channel temperature Storage temperature range Symbol PD (Note 2) Tch Tstg Rating 0.5 150 −55 to 150 Unit W °C °C Weight: 7.0 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within...