SSM5G11TU

SSM5G11TU Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5G11TU DC-DC Converter Applications 4-V drive Combined a P-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage DC Drain current Pulse Drain power dissipation Channel temperature Symbol VDSS VGSS ID IDP PD (Note 1) Tch Rating -30 ± 20 -1.4 A -2.8 500 150 mW °C Unit V V Schottky Barrier Diode (Ta = 25°C) Characteristics Repetitive peak reverse voltage Average forward current Peak one cycle surge forward current Junction temperature Symbol VRRM IF (AV) IFSM Tj Rating 30 0.7 2 (50Hz) 125 Unit V A A °C UFV JEDEC JEITA TOSHIBA 2-2R1A Weight: 7 mg (typ.) MOSFET and Diode (Ta = 25°C) Characteristics Storage temperature range Symbol Tstg Rating −55 to125 Unit °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc)....